PD may play an important role in decreasing the level of halitosis in ESRD patients. Perit Dial Int 2011; 31: 168- 172 selleck compound www. PDIConnect.com epub ahead of print: 25 Mar 2010 doi:10.3747/pdi. 2009.00089″
“BACKGROUND: The global target for tuberculosis (TB) control set by the Millennium Development Goals is a decrease in TB incidence by 2015. Direct measurement
of country-level TB incidence using population-based methods is impractical, emphasising the need for well-performing surveillance systems and, where these are not available, accurate quantification of incidence and under-reporting of TB.
OBJECTIVE: To estimate TB incidence and TB under-reporting in Iraq in 2011.
METHODS: Prospective longitudinal surveillance was established among all eligible public and private non-National TB Programme (NTP) providers in a random sample of eight of the 18 Iraqi governorates from May to July 2011. Record linkage with the NTP and three-source capture-recapture analysis of data were then conducted using log-linear modelling.
RESULTS: A total of 1985 TB cases were identified after record linkage. The NTP registered 1677 patients (observed completeness 84%). The DMXAA concentration estimated total number of TB cases was 2460 (95%CI 2381-2553), with identified TB cases representing 81% (95%CI
69-89) after adjusting for sampling design. The estimated ratio of notified to incident cases was 69% (95%CI 58-76).
CONCLUSIONS: We estimate 14 500 TB cases in Iraq in 2011, of which 31% (95%CI 24-42) were unreported. TB surveillance needs to be strengthened to reduce under-reporting.”
“ZnO film, with urea as nitrogen source to dope its p-type, is deposited by pulsed laser on n-type (100) Si substrate to selleck kinase inhibitor fabricate p-ZnO/n-Si heterojunctions. The current-voltage (I-V) characteristics of the heterojunction have been studied in the temperature range 140-300 K. The turn on voltage decreased with increasing temperature while the breakdown voltage is increased slightly. The forward current is greatly increased with increasing temperature, while the reverse
current is increased nominally. Both the decrease in barrier height and the increase in ideality factor with decrease in temperature are indicative of deviation from the pure thermionic emission-diffusion mechanism. The ln(I-0) versus 1/kT plot exhibits the linear portion corresponding to an activation energy of 0.07 eV. Temperature-dependent forward current measurements suggest that trap-assisted multistep tunneling is the dominant carrier transport mechanism in this heterojunction. C-V analysis indicates an abrupt interface and band bending of 0.96 V in silicon. Heterojunction band diagram for p-ZnO/n-Si is proposed. The hysteresis in the high frequency capacitance voltage (C-V) curve indicates the presence of trapped charges at the interface.