(C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 120: 3109-3117, 2011″
“We report on molecular beam epitaxial growth of AlInSb/GaInSb metamorphic selleckchem high-electron-mobility-transistor structures for low power, high frequency applications on 4 in. GaAs substrates. The structures consist of a Ga(0.4)In(0.6)Sb channel embedded in Al(0.4)In(0.6)Sb barrier layers which are grown on top of an insulating metamorphic buffer, which is based on the linear exchange

of Ga versus In and a subsequent exchange of As versus Sb. Precise control of group V fluxes and substrate temperature in the Al(0.4)In(0.6)As(1-x)Sb(x) buffer is essential to achieve high quality device structures. Good morphological properties were achieved demonstrated by the

appearance of crosshatching and root mean square roughness values of 2.0 nm. Buffer isolation is found to be > 100 k Omega/square for optimized growth conditions. Hall measurements learn more at room temperature reveal electron densities of 2.8 x 10(12) cm(-2) in the channel at mobility values of 21.000 cm(2)/V s for single-sided Te volume doping and 5.4 x 10(12) cm(-2) and 17.000 cm(2)/V s for double-sided Te delta-doping, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544041]“
“How can clinical epileptologists and computational neuroscientists learn to function together within the confines of interdisciplinary teams to develop new and more effective treatment strategies for epilepsy?

Here we introduce epileptologists to the way modelers think about epilepsy as a dynamic disease. Not only is there terminology to be learned, but also it is necessary to identify those areas where clinical input might be expected to have the greatest impact. It is concluded that both groups have major roles to play in educating, evaluating, and shaping the direction of the efforts of each other. (C) 2010 Elsevier Inc. All rights reserved.”
“Two new alternating copolymers based on dithienyl benzotriazole segment and phenylene vinyl unit were synthesized by Heck cross coupling method. The polymers exhibited broad absorption bands (from 300 nm to 752 nm for P1, and from 300 nm to 654 nm for P2) in the UV-visible region BIRB 796 MAPK inhibitor with optical bandgap ranging between 1.6 and 1.9 eV and proper electronic energy levels measured by cyclic voltammetry. The photovoltaic properties of the polymers as electron donors with 6.6-phenyl C61-butyric acid methyl ester as the electron acceptor in a bulk heterojunction structures were reported. Preliminary results showed moderate power conversion efficiency of 0.36% and 0.4%, respectively, under the illumination of AM 1.5, 100 mW/cm 2 with a device structure of ITO/PEDOT : PSS/polymer : PC(60)BM (1 : 3)/Ca/Al. Furthermore, the side chain effect on properties has also been investigated. (C) 2010 Wiley Periodicals, Inc.