This may be because the local patterned
growth of ZnO nanowires reduced the leakage current between two electrodes. Figure 4 ZnO nanowire network UV detector demonstration. (a) Schematic illustration of the UV sensors. (b) Transient photoinduced current measurement under UV light with a fixed bias of 1 V. For UV illumination, a UV lamp with the center wavelength at 365 nm is turned on and off alternatively for every 100 s. Conclusions We introduce a direct selective ZnO nanowire array growth on the inkjet-printed Zn acetate patterning. Zn acetate printing can completely remove the frequent clogging problems in nanoparticle or nanowire inkjet printing process. Compared with the conventional nanowire-based electronics fabrication process which is very time consuming, expensive, and environmentally unfriendly, and only a very low yield is achieved through BMN 673 chemical structure the multiple steps, our proposed method can greatly reduce the processing lead time and simplify the nanowire-based nanofabrication process by removing multiple steps for growth, harvest, manipulation/placement, and integration of the nanowires. Trametinib This process is further successfully applied to the fabrication of ZnO network transistors and UV sensor by making ZnO nanowire array network on the desired metal pattern to confirm its applicability
in device fabrication. Acknowledgements This work is supported by National Research Foundation of Korea (NRF) (grant no. 2012–0008779), Global Frontier R&D Program on Center for Multiscale Energy System (grant no. 2012–054172) under the Ministry of Science, ICT & Future, Korea. References 1. Ko SH, Chung J, Pan H, Grigoropoulos CP, Poulikakos D: Fabrication of AMP deaminase multilayer passive and active electric components on polymer using inkjet printing and low temperature laser processing. Sensors Actuators A 2007, 134:161–168.CrossRef 2. Wang
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