The thickness of the PS beam (2 45 μm) and porosity (81%) were ch

The thickness of the PS beam (2.45 μm) and porosity (81%) were chosen to achieve the same rigidity as an a-Si beam of thickness Selleckchem Compound C 0.6 μm. This allowed us to demonstrate the Panobinostat nmr fabrication process on extremely high-porosity

meso-porous silicon, which is well suited to sensing applications due to its very large surface area [3, 32]. The high porosity and high thickness balance to produce an expected resonant frequency in the range of 16 to 400 kHz for microbeams with length of 100 to 500 μm. Variation of porosity and thickness are also options to adjust frequency of beams (not detailed in this work). Residual and stress gradients in the films need to be studied to allow both doubly clamped and cantilever structures to be fabricated, as these are the basis on most MEMS devices. We are aware that the use of Au as part of the metallisation scheme would prevent implementation in some CMOS foundries. Our investigations have been limited to metals currently available in our facility; however, alternative metallisation or doping could be used to replace the Cr/Au layers for the

electropolishing steps to achieve a completely CMOS-compatible process. Conclusions This work has demonstrated micromachined, suspended PS microbeams with laterally uniform porosity and structurally well-defined beams. We have demonstrated repeated photolithographic processing on PS films that is compatible with CMOS processes; however, for complete CMOS integration, GW4869 supplier a different metallisation may be required to avoid use of Cr/Au. A deposited metal mask layer was used during electropolishing to ensure a uniform electric field and minimal underetching of the PS layer. A new pore filling technique

using SOG allowed the use of thick (2.45 μm) films. The surface profile of the released microbeams indicated well-defined structures. This approach demonstrates a method of fabricating complex PS structures using a scalable Ketotifen PS-MEMS technology. Authors’ information XS received the B.Sc. degree and the M.Sc. degree in optics from Xi’an Jiaotong University, Xi’an, China, in 2005 and 2008. In 2008, he joined the State Intellectual Property Office of China, working on extensive examination of patent applications in the areas of measuring devices and microelectromechanical systems. Since 2012, he has been working toward the Ph.D. degree in microelectronic engineering at The University of Western Australia, Perth, Australia. His thesis focuses on micromachining applications based on porous silicon. GP received the B.S. degree in Chemistry in 1995 and the bachelors and M.Sc. degrees in Electronic Engineering in 1995 and 1997, respectively, all from The University of Western Australia, Perth, and the Ph.D. degree in Electrical Engineering in 2001, from the University of California, Santa Barbara.

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